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| Power MOSFETs 2SK3494 N-channel enhancement mode MOSFET Features * Low on-resistance, low Qg * High avalanche resistance (1.4) Unit: mm 10.50.3 4.60.2 1.40.1 0.60.1 3.00.5 0 to 0.5 * For PDP * For high-speed switching 1.40.1 0.80.1 2.540.3 2.50.2 0 to 0.3 Absolute Maximum Ratings TC = 25C 1 2 3 (10.2) (8.9) (6.4) (1.4) Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability * Power dissipation Ta = 25C Channel temperature Storage temperature Symbol VDSS VGSS ID IDP EAS PD Tch Tstg Rating 250 30 20 80 657 50 1.4 150 -55 to +150 Unit V V A A mJ W (2.1) 1: Gate 2: Drain 3: Source TO-220C-G1 Package Marking Symbol: K3494 C C Note) *: L = 2.79 mH, IL = 20 A, VDD = 50 V, 1 pulse, Ta = 25C Electrical Characteristics TC = 25C 3C Parameter Drain-source surrender voltage Gate threshold voltage Drain-source cutoff current Gate-source cutoff current Drain-source ON resistance Forward transfer admittance Short-circuit forward transfer capacitance (Common-source) Short-circuit output capacitance (Common-source) Reverse transfer capacitance (Common-source) Turn-on delay time Rise time Turn-off delay time Fall time Symbol VDSS Vth IDSS IGSS RDS(on) Yfs Ciss Coss Crss td(on) Tr td(off) tf VDD 100 V, ID = 10 A RL = 10 , VGS = 10 V Conditions ID = 1 mA, VGS = 0 VDS = 10 V, ID = 1 mA VDS = 200 V, VGS = 0 VGS = 30 V, VDS = 0 VGS = 10 V, ID = 10 A VDS = 10 V, ID = 10 A VDS = 25 V, VGS = 0, f = 1 MHz 7 82 14 2 450 356 40 36 20 184 29 Min 250 2.0 4.0 10 1 105 Typ Max Unit V V A A m S pF pF pF ns ns ns ns 1.50.3 Applications 10.10.3 Publication date: March 2004 SJG00037AED 1 2SK3494 Electrical Characteristics (continued) TC = 25C 3C Parameter Diode foward voltage Reverse recovery time Reverse recovery charge Gate charge load Gate-source charge Gate-drain charge Thermal resistance (ch-c) Thermal resistance (ch-a) Symbol VDSF trr Qrr Qg Qgs Qgd Rth(ch-c) Rth(ch-a) Conditions IDR = 20 A, VGS = 0 L = 230 H, VDD = 100 V IDR = 10 A, di/dt = 100 A/s VDD = 100 V, ID = 10 A VGS = 10 V 142 668 41 8.4 14 2.5 89.2 Min Typ Max -1.5 Unit V ns nC nC nC nC C/W C/W Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Safe operation area 1 000 Non repetitive pulse TC = 25C IDP ID 10 t= 1 ms 1 t= 10 ms 10-1 DC t = 100 s 100 PC Ta (1) TC = Ta (2) Without heat sink 100 Collector power dissipation PC (W) Drain current ID (A) 50 (1) 10-2 (2) 1 10 100 1 000 0 0 25 50 75 100 125 150 Drain-source voltage VDS (V) Ambient temperature Ta (C) 2 SJG00037AED |
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